请选择 进入手机版 | 继续访问电脑版
搜索
查看: 1064|回复: 1

基准产生电路ZhI启动电路(1)

[复制链接]
发表于 2017-5-5 13:50 | 显示全部楼层 |阅读模式
这次摘抄几篇paper中关于基准电路中启动电路的结构,后面有两篇中文专利进行了比较详细的学习。
    用于基准电压产生的启动电路的设计非常重要,近期也会不定期更新这方面的学习笔记。

1.2009 A 300 nW, 15 ppm/ C, 20ppm/V CMOS Voltage Reference Circuit Consisting of Subthreshold MOSFETs
1.jpg

2. 2004 TOWARDS A SUB-1 V CMOSVOLTAGE REFERENCE
2.png

3. 2006us7148672 Low Voltage BANDGAP ReferenceCircuit with Startup Control
3.jpg

4. 2014 a low power CMOS voltage reference generator with temperature and process compensation
4.jpg

5. 2015 A wide temperature range voltage bandgap reference generator in 32nm CMOS technology
5.png

6. 2010 low voltage bandgap reference with output regulated current mirror in 90nm CMOS
6.png

  <BTW一下>这里在摘要部分说明了“小于1V带隙基准面临的问题”,However, these structures have outputvoltage errors due to a mismatchin the temperature dependency of the current in the output current mirrordevice and that of the BGR core, caused by the difference between the drain voltages of these devices. To reduceerrors, the output reference voltage is usually set close to theVBE of the BJT [4]. However, this is not a good solution because theoutput current mirror and output resistor forman open-loop configuration, so that accuracy relies on voltage and layout matching alone. In DSM CMOStechnologies such as 90 nm, the variability of devices becomes more severe andthe changes in temperature dependency of the MOS current caused by changes inthe drain voltage are much bigger than those which occur with long-channeltechnologies. This makes it difficult to obtain an output voltage with anacceptable temperature coefficient using the open-loop mirror structure.

7. 2010 NanoPower CMOS Voltage Reference with Temperature and Process Compensation
7.png

  这篇文章以前学习过。

8. CN102385405 一种通用的带隙基准启动电路
8.jpg

  下拉晶体管源极输出端即为启动电路的启动节点,该启动节点连接带隙基准电路的PMOS电流镜栅极,启动电路工作时将带隙基准电路中的PMOS电流镜栅极电平拉低,为三极管充电。用于启动带隙基准电路,使带隙基准电路脱离错误工作状态。
9.jpg

      PMOS管412镜像带隙基准电路的工作电流,NMOS管411镜像由自由偏置电路41产生的比较基准电流,412与411漏极连接构成电流比较电路。当带隙基准电路处于错误兼并点时,412镜像的带隙基准电路支路电流小于411镜像的比较基准电流,由于两管电流应保持相等,因此,411管处于深线性区,VX电压接近地,下拉管413开启,将412栅极也即带隙基准电路PMOS电流镜组栅极电压拉低,为三极管充电,使带隙基准电路脱离错误兼并点,进入正确的工作状态;进入正确的工作状态后,412管镜像的带隙基准电路工作电流大于411管镜像的比较基准电流,因此为保证流过411管和412管的电流相等,412管进入深线性区,VX接近电源电压,此时下拉管413关断,启动电路不对正常工作的带隙基准电路构成影响。


回复

使用道具 举报

您需要登录后才可以回帖 登录 | 立即注册

本版积分规则

关闭

站长推荐上一条 /1 下一条

facebook google plus twitter linkedin weibo
©2019 Tensilica Corporation

小黑屋|手机版|Archiver|Tensilica技术社区

GMT+8, 2019-7-23 08:09 , Processed in 0.155176 second(s), 7 queries , MemCache On.

快速回复 返回顶部 返回列表